elektronische bauelemente pzta42 0.2a , 300v npn silicon medium power transistor 19-feb-2013 rev. b page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? for af driver and output stages ? power switching applications package information package mpq leader size sot-223 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 300 v collector-emitter voltage v ceo 300 v emitter-base voltage v ebo 6 v collector current -continuous i c 0.2 a collector current -pulsed i cm 0.5 a collector power dissipation p c 1 w junction, storage temperature t j, t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. max. unit test conditions collector-base breakdown voltage v (br)cbo 300 - v i c =100 a , i e =0 collector-emitter breakdown voltage v (br)ceo 300 - v i c =1ma, i b =0 emitter-base breakdown voltage v (br)ebo 6 - v i e =100 a, i c =0 collector cut-off current i cbo - 0.1 a v cb =200v, i e =0 emitter-base cutoff current i ebo - 0.1 a v eb =6v, i c =0 25 - v ce =10v, i c =1ma 40 - v ce =10v, i c =10ma dc current gain h fe 40 - v ce =10v, i c =30ma collector-emitter sa turation voltage 1 v ce(sat) - 0.5 v i c =20ma, i b =2ma base-emitter satura tion voltage v be(sat) - 0.9 v i c =20ma, i b =2ma transition frequency f t 50 - mhz v ce =20v, i c =10ma, f=100mh z collector output capacitance c ob - 3 pf v cb =20v, i e =0, f=1mh z top view 1 2 3 4 a m b d l k f g h j e c millimete r millimete r ref. min. max. ref. min. max. a 6.20 6.70 g - 0.10 b 6.70 7.30 h - - c 3.30 3.70 j 0.25 0.35 d 1.42 1.90 k - - e 4.50 4.70 l 2.30 ref. f 0.60 0.82 m 2.90 3.10 sot-223
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